LS-D015-2.5

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

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The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.
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