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The core of a light-emitting diode is a wafer consisting of a p-type semiconductor and an n-type semiconductor, with a transition layer between the p-type semiconductor and the n-type semiconductor called a p-n junction. PN junction in some semiconductor materials, the injection of a few carriers and the majority of carriers compound will release excess energy in the form of light, thereby directly converting electrical energy into light energy. pn junction plus reverse voltage, a few carriers difficult to inject, so no light. This use of injected electroluminescence principle of the diode called light-emitting diodes, commonly known as LED. When it is in the forward working state (i.e., both ends plus forward voltage), current flow from the LED anode to the cathode, the semiconductor crystal will be issued from the ultraviolet to infrared light of different colors, the intensity of light and current-related.

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    The core of a light-emitting diode is a wafer consisting of a p-type semiconductor and an n-type semiconductor, with a transition layer between the p-type semiconductor and the n-type semiconductor called a p-n junction. PN junction in some semiconductor materials, the injection of a few carriers and the majority of carriers compound will release excess energy in the form of light, thereby directly converting electrical energy into light energy. pn junction plus reverse voltage, a few carriers difficult to inject, so no light. This use of injected electroluminescence principle of the diode called light-emitting diodes, commonly known as LED. When it is in the forward working state (i.e., both ends plus forward voltage), current flow from the LED anode to the cathode, the semiconductor crystal will be issued from the ultraviolet to infrared light of different colors, the intensity of light and current-related.

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