LS-20#CXZD

The core of a light-emitting diode is a wafer consisting of a p-type semiconductor and an n-type semiconductor, with a transition layer between the p-type semiconductor and the n-type semiconductor called a p-n junction. PN junction in some semiconductor materials, the injection of a few carriers and the majority of carriers compound will release excess energy in the form of light, thereby directly converting electrical energy into light energy. pn junction plus reverse voltage, a few carriers difficult to inject, so no light. This use of injected electroluminescence principle of the diode called light-emitting diodes, commonly known as LED. When it is in the forward working state (i.e., both ends plus forward voltage), current flow from the LED anode to the cathode, the semiconductor crystal will be issued from the ultraviolet to infrared light of different colors, the intensity of light and current-related.

LS--M201

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

LS-D015-2.5

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

LS-35CX-GD10

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

LS--M101

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

LS-5521

The core part of LED is a chip composed of p-type semiconductor and n-type semiconductor. There is a transition layer between p-type semiconductor and n-type semiconductor, called p-n junction. In the PN junction of some semiconductor materials, when the injected minority carrier and the majority carrier are combined, the excess energy will be released in the form of light, and the electric energy will be directly converted into light energy. PN junction with reverse voltage makes it difficult to inject a few carriers, so it does not emit light. This kind of diode made by injection electroluminescence principle is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the positive voltage is applied at both ends), when the current flows from the LED anode to the cathode, the semiconductor crystal will emit different colors of light from ultraviolet to infrared, and the intensity of the light is related to the current.

LS-004

Power: 5W/8W/12W/20W/30W Light source type: COB Lamp body color: white/black Operating voltage: 85-265V Luminous angle: 24 ° Material: die-cast aluminum Color temperature: 3000K/4000K/6000K Explicit: Raz80 Lumens: 90LM/W

LS-416/616/816

Power: 5W/8W/12W/20W/30W Light source type: COB Lamp body color: white/black Operating voltage: 85-265V Luminous angle: 24 ° Material: die-cast aluminum Color temperature: 3000K/4000K/6000K Explicit: Raz80 Lumens: 90LM/W

LS-5016/7016/9016/1216/1416

Power: 5W/8W/12W/20W/30W Light source type: COB Lamp body color: white/black Operating voltage: 85-265V Luminous angle: 24 ° Material: die-cast aluminum Color temperature: 3000K/4000K/6000K Explicit: Raz80 Lumens: 90LM/W

LS-5520/7520/9520

Power: 5W/8W/12W/20W/30W Light source type: COB Lamp body color: white/black Operating voltage: 85-265V Luminous angle: 24 ° Material: die-cast aluminum Color temperature: 3000K/4000K/6000K Explicit: Raz80 Lumens: 90LM/W
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