The difference between a photodiode and a phototransistor


Release time:

Jan 17,2023

The photosensitive surface of the photodiode core is a thin film layer formed on n-type single crystal silicon by diffusion technology. The pn junction area of the photodiode core and core is large, and the electrode area of core one is small. The depth of the pn junction is generally shallow for semiconductor diodes to improve the photoelectric conversion function.

The difference between a photodiode and a phototransistor

The photodiode housing has a glass lens, through which the lens can be directed into the core. The core of the photodiode is a pn junction with light-sensitive properties.

The photosensitive surface of the photodiode core is a thin film layer formed on n-type single crystal silicon by diffusion technology. The pn junction area of the photodiode core and core is large, and the electrode area of core one is small. The depth of the pn junction is generally shallow for semiconductor diodes to improve the photoelectric conversion function.

In addition, like ordinary semiconductor diodes, the SiO2 protective layer is embedded in the silicon wafer to protect the edges of the pn junction, improving the stability of the photodiode and reducing the dark current.

There are two differences between photodiodes and phototransistors. The first difference is that the outer packaging is different. Photodiodes have two kinds of outer packaging, namely plastic packaging and mechanically sealed packaging, while phototransistors have only plastic packaging. The second difference is that the voltage is different. Because the phototransistor is an upgraded version of the photodiode, the voltage of the phototransistor will be greater, and the use of the effect will be better. But the phototransistor voltage in a light-free environment is higher than the photodiode, so choose carefully.

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